crystal growth process

High-purity polysilicon blocks and trace the doping agent placed in a quartz crucible Czochralski method, the basic process, heating melting in vacuum or high pure argon atmosphere, control the proper temperature, the seed into the melt, polycrystalline melt according to the seed crystal silicon atoms arranged sequence solidification into silicon.The crystal growth process includes melting, shrinkage neck, shoulder, and so on..

Zone melting method belongs to the crucible method a, the significant feature of the method is no crucible containing molten silicon, but rely on under the action of high frequency electromagnetic field of silicon surface tension and the electromagnetic force support local melting silicon liquid, also known as floating zone melting and zone refining principle is according to the crystal melting recrystallization process impurities in different concentration of solid phase and liquid phase and achieve the purpose of purification.

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